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| www..com 2SK1278 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET F- V SERIES Outline Drawings TO-3P Features Include fast recovery diode High voltage Low driving power Applications Motor controllers Inverters Choppers 3. Source JEDEC EIAJ SC-65 Maximum ratings and characteristics Absolute maximum ratings ( Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Continuous reverse drain current Gate-source peak voltage Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls) IDR(puls) VGS PD Tch Tstg Rating 500 10 40 10 20 100 +150 -55 to +150 Unit V V A A V W C C Equivalent circuit schematic Drain(D) FRD Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton (ton=td(on)+tr) Turn-off time toff (toff=td(off)+tf) Diode forward on-voltage Reverse recovery time Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf VSD trr Test Conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=500V VGS=0V VGS=20V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V RG=25 ID=10A VGS=10V Min. 500 2.1 Tch=25C Typ. Max. Units V V A nA S pF IF=IDR VGS=0V Tch=25C IF=IDR di/dt=100A/s Tch=25C 3.0 4.0 10 500 10 100 0.80 1.10 4.0 8.0 1100 1600 140 210 75 110 25 40 60 90 200 300 90 140 0.95 1.8 150 200 ns V ns Thermal characteristics Item Thermal resistance Symbol Rth(ch-a) Rth(ch-c) Test Conditions channel to ambient channel to case Min. Typ. Max. 35.0 1.25 Units C/W C/W 1 www..com FUJI POWER MOSFET Characteristics Typical output characteristics 30 3.0 2SK1278 On state resistance vs. Tch 20 ID [A] 2.0 RDS(on) [] 10 1.0 0 0 10 VDS [ V ] 20 30 0 -50 0 50 Tch [ C ] 100 150 Typical transfer characteristics 30 3.0 Typical Drain-Source on state resistance vs. ID 20 ID [A] 10 RDS(on) [] 2.0 1.0 0 0 2.0 4.0 VGS [ V ] 6.0 0 0 10 ID [ A ] 20 30 Typical forward transconductance vs. ID 15 5.0 Gate threshold voltage vs. Tch 4.0 10 gfs [S] 5 2.0 VGS(th) 3.0 [V] 0 0 10 ID [ A ] 20 30 1.0 -50 0 50 Tch [ C ] 100 150 2 www..com FUJI POWER MOSFET Typical capacitance vs. VDS 500 10 5 400 2SK1278 Typical input charge 20 16 C [nF] 300 1 0.5 VDS [V] 200 12 VGS [V] 8 100 0.1 0 0 10 20 VDS [ V ] 30 40 4 0 50 100 Qg [ nC ] 150 0 200 Forward characteristics of reverse diode 30 50 Safe operating area 10 5 ID [A] 1 0.5 1 0.5 10 5 IF [A] 0.1 0.1 0 0.5 1.0 VSD [ V ] 1.5 5 10 50 100 VDS [ V ] 500 1000 Transient thermal impedance 100 Rth [C/W] 10-1 10-2 10-5 10-4 10-3 10-2 t [ sec. ] 10-1 100 101 3 www..com FUJI POWER MOSFET IF-di/dt characteristics of reverse diode Reverse recovery characteristics 2SK1278 100 100 50 IF [A] 30 trr 50 [ ns ] 30 10 5 3 Irr [A] 10 5 3 1 1 5 10 30 50 100 300 500 1000 0 5 IF [ A ] 10 -di/dt [ A/s ] 4 |
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